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Proceedings Paper

ICP etching of InP and related materials using photoresist as mask
Author(s): Ligang Deng; Goodyear L. Andrew; Mark Dineen
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Paper Abstract

New processes using HBr chemistry have been developed for etching InP and related materials using photoresist as a mask in a high ion density inductively coupled plasma system. An etch rate of above 1 micron/min, a selectivity of 14:1 with vertical profile, and smooth etched surface have been achieved. The effects of ICP power, table temperature, chamber pressure and DC bias on etching rate, selectivity, etched profile and surface morphology will be discussed in this paper.

Paper Details

Date Published: 12 May 2004
PDF: 6 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.520922
Show Author Affiliations
Ligang Deng, Oxford Instruments Plc (United Kingdom)
Goodyear L. Andrew, Oxford Instruments Plc (United Kingdom)
Mark Dineen, Oxford Instruments Plc (United Kingdom)


Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

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