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Proceedings Paper

Beta-In2S3 thin films prepared by the sulpherization of evaporated indium films
Author(s): Yoosuf Rahana; Kalloor Cheekku Jerome; Antony Aldrin; Manoj Ramachandran; Madambi Kunjukuttan Jayaraj
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Paper Abstract

β-In2S3 films were grown on glass and quartz substrates by the rapid heating of metallic indium films in H2S atmosphere. The effect of sulphurisation temperature and time on the growth of single phase In2S3 and its electrical and optical properties have been investigated. The influences of processing parameters on the electrical and optical properties have been studied. The band gaps of In2S3 films were in the range 1.9 eV to 2.3eV. All the films exhibit n-type conductivity. The studies on temperature dependence of conductivity indicate a variable range hopping mechanism.

Paper Details

Date Published: 12 May 2004
PDF: 7 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.520496
Show Author Affiliations
Yoosuf Rahana, Cochin Univ. of Science and Technology (India)
Kalloor Cheekku Jerome, Cochin Univ. of Science and Technology (India)
Antony Aldrin, Cochin Univ. of Science and Technology (India)
Manoj Ramachandran, Cochin Univ. of Science and Technology (India)
Madambi Kunjukuttan Jayaraj, Cochin Univ. of Science and Technology (India)


Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

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