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Proceedings Paper

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure
Author(s): Yun Xu; Xiaopeng Zhu; Xiaojun Ye; Xiangning Kang; Qing Cao; Liang Guo; Lianghui Chen
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Paper Abstract

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

Paper Details

Date Published: 12 May 2004
PDF: 9 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.520418
Show Author Affiliations
Yun Xu, Institute of Semiconductors (China)
Xiaopeng Zhu, Institute of Semiconductors (China)
Xiaojun Ye, Institute of Semiconductors (China)
Xiangning Kang, Institute of Semiconductors (China)
Qing Cao, Institute of Semiconductors (China)
Liang Guo, Institute of Semiconductors (China)
Lianghui Chen, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

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