Share Email Print
cover

Proceedings Paper

Single-photon detector at 1550 nm with gate-mode quenched InGaAs/InP avalanche photodiode
Author(s): Guang Wu; Chunyuan Zhou; Xiuliang Chen; Xianghe Li; Heping Zeng
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In our recent experiment, we have designed a novel single-photon detecting module for quantum key distribution using an InGaAs/InP avalanche photodiode with gate-mode quenched photo-detection. At a repetition rate of 100 kHz and the working temperature of -60°C, we obtained the detection efficiency η higher than 10% and 20% at the dark probability Pd about 1.3×10-5 and 1.6×10-5 per nanosecond, respectively. Also at 100 kHz, we got the best ratio of Pd/η as 1.7×10-3 per pulse (20 ns). And at a lower repetition such as 10 kHz, we obtained Pd/η as 8.9×10-4 per pulse.

Paper Details

Date Published: 12 May 2004
PDF: 7 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.520253
Show Author Affiliations
Guang Wu, East China Normal Univ. (China)
Univ. of Sydney (Australia)
Chunyuan Zhou, East China Normal Univ. (China)
Univ. of Sydney (Australia)
Xiuliang Chen, East China Normal Univ. (China)
Univ. of Sydney (Australia)
Xianghe Li, East China Normal Univ. (China)
Univ. of Sydney (Australia)
Heping Zeng, East China Normal Univ. (China)
Univ. of Sydney (Australia)


Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

© SPIE. Terms of Use
Back to Top