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Proceedings Paper

Optimization design and fabrication of photonic crystal waveguides based on SOI using 248-nm deep-UV lithography
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Paper Abstract

In this work, methods of design and fabrication of photonic bandgap structures (PBG) and photonic crystal waveguides based on SOI (silicon on insulator) are presented. In theory, a method that incorporates the plane wave expansion (PWE) method based on supercell with the finite-difference time-domain (FDTD) method with a perfectly matched layer (PML) boundary condition has been investigated. At first, PWE simulation will present a band structure. Then according to the band structure, FDTD tool can simulate a light propagation and can obtain optimized parameters easily. With the method, several photonic crystal devices suitable for 248nm Deep UV lithography and 0.18um ion-beam etching are designed and fabricated.

Paper Details

Date Published: 12 May 2004
PDF: 7 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.520153
Show Author Affiliations
Lingyun Xie, Tsinghua Univ. (China)
Yejin Zhang, Tsinghua Univ. (China)
Xiaozhou Peng, Tsinghua Univ. (China)
Shizhong Xie, Tsinghua Univ. (China)


Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

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