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Proceedings Paper

Silicon waveguide fabrication process based on the anisotropic etching of Si<111>-oriented wafers
Author(s): Dana Cristea; Paula Obreja; Elena Manea; M. Kusko
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Paper Abstract

The fabrication process of c-Si waveguides based on the anisotropic etching of Si<111> oriented wafers is described. To obtain c-Si waveguides, the anisotropic etching was combined with an isotropic pre-etch step to a depth equal to the thickness of the final c-Si freestanding structure, followed by side-wall passivation. In addition, a second pre-etching step was performed to establish the depth of the air gap that acts as the bottom cladding of the waveguide. Freestanding c-Si waveguides with very smooth surfaces were obtained by anisotropic etching in a KOH solution. By using a Si3N4/SiO2 mask layer, double waveguides were obtained. The possible applications of c-Si based free standing structures include devices for optical communications and evanescent-wave bio- or chemical sensors.

Paper Details

Date Published: 30 September 2003
PDF: 5 pages
Proc. SPIE 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, (30 September 2003); doi: 10.1117/12.520045
Show Author Affiliations
Dana Cristea, National Institute for R&D in Microtechnologies (Romania)
Paula Obreja, National Institute for R&D in Microtechnologies (Romania)
Elena Manea, National Institute for R&D in Microtechnologies (Romania)
M. Kusko, National Institute for R&D in Microtechnologies (Romania)


Published in SPIE Proceedings Vol. 5227:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies

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