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Proceedings Paper

Photoconductivity of amorphous As2S3-Sb2S3 thin films
Author(s): M. A. Iovu; Mihai S. Iovu; Sergiu D. Shutov
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Paper Abstract

The results of steady state and transient photoconductivity characteristics of As-S-Sb thermally deposited amorphous thin films are presented. The lux-ampere characteristics of the steady-state photoconductivity are described by the power low dependence σ = B • Fγ with the power index [equation] where T* is the parameter of localized states distribution. The spectral characteristics of the photoconductivity for As-S-Sb thin films represents a curve with a broad peak centered at 2.50-1.93 eV, and is shifted in the low energy region of the spectrum when the Sb content is increasing in the glass alloy. The transient characteristics of As-S-Sb amorphous films are discussed in frame of trap-controlled model for an exponential distribution of localized states in the band gap of amorphous semiconductor.

Paper Details

Date Published: 30 September 2003
PDF: 8 pages
Proc. SPIE 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, (30 September 2003); doi: 10.1117/12.520035
Show Author Affiliations
M. A. Iovu, Ctr. of Optoelectronics (Moldova)
Mihai S. Iovu, Ctr. of Optoelectronics (Moldova)
Sergiu D. Shutov, Ctr. of Optoelectronics (Moldova)


Published in SPIE Proceedings Vol. 5227:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies

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