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Proceedings Paper

EUVL mask with Ru ML capping
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Paper Abstract

Silicon (Si) capping for extreme ultra-violet lithography (EUVL) multilayer (ML) mask blank presents certain disadvantages, such as prone to oxidation, low chemical resistance, low SiO2 buffer layer etch selectivity to the capping layer. These performance and process issues with Si capped ML mask blank will reduce mask lifetime and require tighter process margin during EUVL mask processing. Using ruthenium (Ru) to replace Si for ML capping has been investigated previously for EUVL optics application. High oxidation resistance for Ru capped ML optics has been demonstrated. In this study, we have further demonstrated that Ru capped ML mask blank can also overcome the process issues that are associated with the Si capping. Our mask patterning results showed very high absorber and buffer etch selectivity to the Ru capping layer. As a result, uniform mask reflectivity after mask patterning is obtained. In this paper we will present detailed Ru capped ML mask fabrication results, such as etch profile, etch selectivity to the ML capping, as well as mask quality characterization results, which include ML performance data comparison before and after the mask patterning.

Paper Details

Date Published: 17 December 2003
PDF: 6 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.520024
Show Author Affiliations
Pei-Yang Yan, Intel Corp. (United States)
Guojing Zhang, Intel Corp. (United States)
Scott Chegwidden, Intel Corp. (United States)
Eberhard Adolf Spiller, Spiller X-ray Optics (United States)
Paul B. Mirkarimi, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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