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Proceedings Paper

Properties of a 248-nm DUV laser mask pattern generator for the 90-nm and 65-nm technology nodes
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Paper Abstract

This paper presents the properties of a second-generation DUV laser pattern generator based on spatial light modulator technology and designed to meet the requirements of the 90-nm to 65-nm technology nodes. The system, named Sigma7300, is described and major changes compared to its predecessor are pointed out. These changes result in improved pattern accuracy and fidelity as well as system reliability and maintenance. This improved performance is accompanied with greatly reduced writing times of typically 3 Hrs. per mask. Performance data is presented that shows the system meets the resolution requirement of 260 nm with CD linearity of 10 nm and assist line resolution of 140 nm. CD uniformity data and registration data are also presented that indicates that the system meets the requirements for most layers at the 90-nm and 65-nm nodes.

Paper Details

Date Published: 17 December 2003
PDF: 11 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.519970
Show Author Affiliations
Johan Aman, Micronic Laser Systems AB (Sweden)
Hans A. Fosshaug, Micronic Laser Systems AB (Sweden)
Tobias Hedqvist, Micronic Laser Systems AB (Sweden)
Jan Harkesjo, Micronic Laser Systems AB (Sweden)
Peter Hogfeldt, Micronic Laser Systems AB (Sweden)
Marie Jacobsson, Micronic Laser Systems AB (Sweden)
Andrzej Karawajczyk, Micronic Laser Systems AB (Sweden)
Johan Karlsson, Micronic Laser Systems AB (Sweden)
Mats Rosling, Micronic Laser Systems AB (Sweden)
Henrik J. Sjoberg, Micronic Laser Systems AB (Sweden)

Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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