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Proceedings Paper

Influence of material performance parameters of GaAs/AlGaAs photoemission
Author(s): Xiaoqing Du; Benkang Chang
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Paper Abstract

Photocathode based on GaAs/AlGaAs heterojunction has been applied broadly for its broad spectral response wavelength, high quantum efficiency and low dark current. To obtain more effective photoemission, reasonable selection of material parameters of GaAs/AlGaAs heterojunction is required. In this paper on basis of three step photoemission model, the dependence of adsorption coefficient of GaAs, electron diffusion length and surface escape probability on p-type doping concentration are made analysis, and theoretic quantum efficiency of GaAs/AlGaAs heterojunction photocathodes for different doping concentrations are deduced. From the calculated results the optimum doping concentration for p-type GaAs is between 3.0×1018cm-3 and 6.0×1018cm-3 and response threshold wavelength moves towards long-wave with doping concentration increases.

Paper Details

Date Published: 12 May 2004
PDF: 8 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.519908
Show Author Affiliations
Xiaoqing Du, Nanjing Univ. of Science and Technology (China)
Benkang Chang, Nanjing Univ. of Science and Technology (China)

Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

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