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Proceedings Paper

Non-equilibrium electronic processes in nanocrystalline silicon
Author(s): M. L. Ciurea; V. Iancu; M. Draghici; L. Jdira
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Paper Abstract

Nanocrystalline silicon is studied with a view to obtaining a new photonic material. Non-equilibrium electronic processes in such materials play a significant role. We have studied trapping phenomena in nanocrystalline porous silicon and nanocrystalline silicon-based Multi-Quantum Wells structures by means of Optical Charging Spectroscopy method, which is a very good and sensitive method. We have also analyzed the modeling of the processes that occur during our measurements. This modeling allows us to separate the relative contribution of the different types of discharge currents that can appear: ohmic conduction currents of either equilibrium or non-equilibrium carriers, displacement currents, diffusion currents and tunneling currents through insulating layers (in Multi-Quantum Wells structures). It also allows us to increase the accuracy of the determination of the experimental trap parameters and to determine parameters that are not directly measurable. The model can be applied to other nanocrystalline semiconductors and can be easily generalized for other high resistivity materials.

Paper Details

Date Published: 30 September 2003
PDF: 7 pages
Proc. SPIE 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, (30 September 2003); doi: 10.1117/12.519905
Show Author Affiliations
M. L. Ciurea, National Institute of Materials Physics (Romania)
V. Iancu, Univ. Politehnica of Bucharest (Romania)
M. Draghici, National Institute of Materials Physics (Romania)
L. Jdira, National Institute of Materials Physics (Romania)


Published in SPIE Proceedings Vol. 5227:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies

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