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Proceedings Paper

Photoelectrical phenomenon in n+-p-junctions based on HgCdTe
Author(s): Igor S. Virt; Galina M. Khlyap; Myron F. Bilyk; Petro Shkumbatiuk; Marian Kuzma; Marian Bester
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Paper Abstract

Narrow-gap semiconductor HgCdTe is one of the important elements used by the new IR-photonics. The well-developed technological methods suitable for preparation of different structures based on the material and high flexibility of the modern doping techniques made it possible to obtain materials with various properties. This article deals with some characteristics of photodiodes created by B ion implantation of this compound. Photoresponse of Hg1-xCdxTe+> -based photodiodes is investigated. The peculiarities observed experimentally can be determined by effects occuring in the region of n+-p-junction due to local inhomogeneity of boron impurity and irradiation defects taking place under the process of the diodes preparation. It has been found that the processes of transport and recombination of the injected minority carriers are effected by these inhomogeneities. Auger-recombimation is revealed as a dominant process in the interval of the impurity conduction. At the same time, the minority carriers' lifetime is decreased due to appearance of low-ohmic sections of the current registered experimentally. The form of the current pulse observed in n+-p-junctions is explained by electrons recombination in the base of the junction under forward direction of the current. Spectral and noise properties and kinetic characteristics of the HgCdTe-based photodiodes are also studied.

Paper Details

Date Published: 22 October 2003
PDF: 5 pages
Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); doi: 10.1117/12.519774
Show Author Affiliations
Igor S. Virt, Pedagogical Univ. (Ukraine)
Galina M. Khlyap, Pedagogical Univ. (Ukraine)
Myron F. Bilyk, Pedagogical Univ. (Ukraine)
Petro Shkumbatiuk, Pedagogical Univ. (Ukraine)
Marian Kuzma, Rzeszow Univ. (Poland)
Marian Bester, Rzeszow Univ. (Poland)

Published in SPIE Proceedings Vol. 5136:
Solid State Crystals 2002: Crystalline Materials for Optoelectronics
Jaroslaw Rutkowski; Antoni Rogalski, Editor(s)

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