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Proceedings Paper

Conductivity anisotropy of CdHgTe MBE layers with a periodic surface microrelief
Author(s): Aleksander V. Voitsekhovskii; Andrej P. Kokhanenko; N. V. Nesterovich; Vasily S. Varavin; Sergey A. Dvoretsky; Yuri G. Sidorov; Nikolay N. Mikhailov
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Paper Abstract

The surface microrelief of CdHgTe layers grown by molecular-beam epitaxy (MBE) method has been studied by means of atomic-force microscopy. A periodic surface microrelief in the form of an ordered system of extended waves with the characteristic period 0.1-0.2 μm has been detected on epilayers grown at increased temperatures. Angular dependencies of the conductivity at 77 K have been measured and the conductivity anisotropy has been detected with a minimum in the direction transverse to microrelief waves. A feature of the transmission system and the spectrum change after film annealing are observed. It is assumed that walls growing in the direction from the substrate to the surface are formed under microrelief waves slopes. Such structure can cause the observed feature of the transmission spectrum if the adjacent walls have different composition. In this work a calculation of spectral characteristics taking into account the influence of variable-gap composition and nonuniformity of the composition through the depth has been carried out.

Paper Details

Date Published: 22 October 2003
PDF: 6 pages
Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); doi: 10.1117/12.519765
Show Author Affiliations
Aleksander V. Voitsekhovskii, Siberian Physico-Technical Institute (Russia)
Andrej P. Kokhanenko, Siberian Physico-Technical Institute (Russia)
N. V. Nesterovich, Siberian Physico-Technical Institute (Russia)
Vasily S. Varavin, Institute of Semiconductor Physics (Russia)
Sergey A. Dvoretsky, Institute of Semiconductor Physics (Russia)
Yuri G. Sidorov, Institute of Semiconductor Physics (Russia)
Nikolay N. Mikhailov, Institute of Semiconductor Physics (Russia)

Published in SPIE Proceedings Vol. 5136:
Solid State Crystals 2002: Crystalline Materials for Optoelectronics
Jaroslaw Rutkowski; Antoni Rogalski, Editor(s)

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