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Proceedings Paper

Simulation of threshold operation of GaInNAs diode lasers
Author(s): Robert P. Sarzala; Pawel Mackowiak; M. Wasiak; T. Czyszanowski; Wlodzimierz Nakwaski
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Paper Abstract

The advanced three-dimensional fully self-consistent optical-electrical-thermal-gain model of the 1.3-μm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser (VCSEL) has been developed to simulate its room-temperature (RT) continuous-wave (CW) performance characteristics and to enable its structure optimisation. The standard GaInNAs VCSEL structure with an intracavity-contacted configuration exhibits very nonuniform current injection into its active region, whereas a uniform current injection is important in long-wavelength VCSELs for low threshold, high-efficiency and stable-mode operation. Therefore we decided to insert an additional tunnel junction within the active-region neighbourhood. The tunnel junction is shown to enhance effectively hole injection via a lateral electron current, with only a modest increase (a small penalty) in voltage drop and series resistance compared to standard devices.

Paper Details

Date Published: 22 October 2003
PDF: 5 pages
Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); doi: 10.1117/12.519754
Show Author Affiliations
Robert P. Sarzala, Technical Univ. of Lodz (Poland)
Pawel Mackowiak, Technical Univ. of Lodz (Poland)
M. Wasiak, Technical Univ. of Lodz (Poland)
T. Czyszanowski, Technical Univ. of Lodz (Poland)
Wlodzimierz Nakwaski, Technical Univ. of Lodz (Poland)
CHTM, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 5136:
Solid State Crystals 2002: Crystalline Materials for Optoelectronics
Jaroslaw Rutkowski; Antoni Rogalski, Editor(s)

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