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Proceedings Paper

Control of ferromagnetism in Cd1-xMnx Te quantum wells
Author(s): S. Tatarenko; M. Bertolini; W. Maslana; H. Boukari; B. Gilles; J. Cibert; D. Ferrand; P. Kossacki; Jan A. Gaj
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Paper Abstract

New structures aiming at controlling ferromagnetic properties of Diluted Magnetic Semiconductors quantum wells are presented. The carrier density is monitored by applying voltage in p-i-n diode or adjusting a distance between quantum well and surface. Surface doping was successfully applied to obtain samples with CdMnTe quantum well with up to 9.3% Mn concentration.

Paper Details

Date Published: 22 October 2003
PDF: 7 pages
Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); doi: 10.1117/12.519671
Show Author Affiliations
S. Tatarenko, CEA-CNRS-UJF (France)
M. Bertolini, CEA-CNRS-UJF (France)
W. Maslana, CEA-CNRS-UJF (France)
Warsaw Univ. (Poland)
H. Boukari, CEA-CNRS-UJF (France)
B. Gilles, Lab. de Thermodynamique et Physico-Chimie Metallurgiques-CNRS (France)
J. Cibert, CEA-CNRS-UJF (France)
D. Ferrand, CEA-CNRS-UJF (France)
P. Kossacki, CEA-CNRS-UJF (France)
Warsaw Univ. (Poland)
Jan A. Gaj, Warsaw Univ. (Poland)


Published in SPIE Proceedings Vol. 5136:
Solid State Crystals 2002: Crystalline Materials for Optoelectronics
Jaroslaw Rutkowski; Antoni Rogalski, Editor(s)

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