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Proceedings Paper

Investigation of deep levels in porous silicon by photoconductivity decay and thermally stimulated depolarization current methods
Author(s): P. Borowski; A. Bratkowski; Waclaw Bala; K. Bartkiewicz
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Paper Abstract

The photoconductivity measurements of porous silicon were made using the visible light in wavelength range of 450 nm - 1200 nm. Obtained photoconductivity spectra were decomposed as a sum of Gaussian. The deep level energies are calculated for these peaks at about 1.24 eV, 1.33 eV, 1.55 eV, 1.84 eV, 2.17 eV and 2.54 eV at room temperature. To characterizing the deep levels we used also thermally stimulated depolarizaton current method (TSDC). In this case we used a thermal stimulation in temperature range of about 90 K - 300 K in vaccuum. After multigaussian decomposing of the current-temperature characteristic we calculated the thermal deep levels energies (0.4 eV and 0.8 eV). From the voltage-current measurements ideality factor was also calculated.

Paper Details

Date Published: 22 October 2003
PDF: 8 pages
Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); doi: 10.1117/12.518782
Show Author Affiliations
P. Borowski, Nicolaus Copernicus Univ. (Poland)
A. Bratkowski, Nicolaus Copernicus Univ. (Poland)
Waclaw Bala, Nicolaus Copernicus Univ. (Poland)
K. Bartkiewicz, Nicolaus Copernicus Univ. (Poland)

Published in SPIE Proceedings Vol. 5136:
Solid State Crystals 2002: Crystalline Materials for Optoelectronics
Jaroslaw Rutkowski; Antoni Rogalski, Editor(s)

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