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Proceedings Paper

Radiation effect on domain and defect structure of BaTiO3 crystals
Author(s): Evgeni G. Fesenko; Agata Lisinska-Czekaj; Dionizy Czekaj; Zygmunt Surowiak
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Paper Abstract

BaTiO3 single crystals were obtained by Remeika-method from solutions of melted salts and oxides. Radioactive Co60 isotope was employed as a source of γ-radiation. Three different radiation doses were applied: 1.2 x 107 rad, 3.0 x 108 rad, and 1.3 x 107 rad. Temperature of single crystals during irradiation did not exceed 313 K. A few batches of crystals were subjected to irradiation, namely: single crystals with natural surface (after the crystal was grown), single crystals with the etched surface layer and single crystals which had been subjected to an influence of the strong direct and alternating electric fields before exposure. Both domain and defect structure of single crystals was investigated by the etching method, decorating method, optical microscopy and scanning electron microscopy. It has been found that irradiation causes destabilization of the domain walls of the head-to-head-type with a negative charge screening spontaneous polarization (Ps). The negative domains in a positive matrix, which did not grow through the whole crystal body, were found to decay under the influence of radiation. In a place previously occupied by decaying negative domains, defect clusters are observed. The investigations have shown that there is a close correlation between the domain structure and the defect structure of BaTiO3 crystals.

Paper Details

Date Published: 22 October 2003
PDF: 6 pages
Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); doi: 10.1117/12.518713
Show Author Affiliations
Evgeni G. Fesenko, Rostov State Univ. (Russia)
Agata Lisinska-Czekaj, Univ. of Silesia (Poland)
Dionizy Czekaj, Univ. of Silesia (Poland)
Zygmunt Surowiak, Univ. of Silesia (Russia)


Published in SPIE Proceedings Vol. 5136:
Solid State Crystals 2002: Crystalline Materials for Optoelectronics
Jaroslaw Rutkowski; Antoni Rogalski, Editor(s)

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