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Proceedings Paper

Flows for model-based layout correction of mask proximity effects
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Paper Abstract

In this paper, we will investigate methods for adapting model-based OPC tools to do layout correction (biasing) for mask makgin proximity effects. (Mask Proximity Correction). We will discuss three aspects of this problem: (1) typical models to use for mask making; (2) calibration of the model using mask measurement data; (3) one-pass versus two-pass flows for correction of mask making proximity effects.

Paper Details

Date Published: 17 December 2003
PDF: 9 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518477
Show Author Affiliations
Nicolas B. Cobb, Mentor Graphics Corp. (United States)
Wilhelm Maurer, Mentor Graphics Corp. (United States)

Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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