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Proceedings Paper

EUV substrate and blank inspection with confocal microscopy
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Paper Abstract

One of the key challenges for the successful implementation of EUV Lithography (EUVL) is the supply of defect free mask blanks. Obviously a reliable defect inspection is a prerequisite to achieve this goal. We report results from a EUVL blank inspection tool developed by Lasertec. The inspection principle of this tool is based on confocal microscopy at 488nm inspection wavelength. On quartz substrates a sensitivity of 60nm is demonstrated. On buried defects in the multilayer stack a reasonable capture rate down to approximately 25nm defect height has been measured. We compare these results to previously reported data on the wafer version (M350) of the current M1350.

Paper Details

Date Published: 17 December 2003
PDF: 10 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518388
Show Author Affiliations
Jan-Peter Urbach, International SEMATECH (United States)
Jan F. W. Cavelaars, International SEMATECH (United States)
Hal Kusunose, Lasertec Corp. (Japan)
Ted Liang, Intel Corp. (United States)
Alan R. Stivers, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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