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Proceedings Paper

Cell projection EB exposure for Giga DRAM device mask
Author(s): Jae Cheon Shin; Munki Lim; Youngmo Lee; Bo-Kyung Choi; Yongkyoo Choi; Oscar Han
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Paper Abstract

We have developed a new method to make cell projection aperture with high degree of accuracy which provides stable and accurate pattern fidelity on wafer and could be adaptable to mask process. As an electron beam mask, deep and vertical silicon pattern is made by MERIE poly etcher. Trench pattern profile can be optimized by etching chemistry. And to obtain fine pattern with cell projection exposure, various techniques are used such as pattern fracturing, modified cell aperture layout and shot shift. As a feasibility of cell projection EB exposure, 0.2μm feature were defined with VSB (variable shaped beam) and CPB (cell projection beam) on wafer and evaluated.

Paper Details

Date Published: 17 December 2003
PDF: 8 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518332
Show Author Affiliations
Jae Cheon Shin, Hynix Semiconductor Inc. (South Korea)
Munki Lim, Hynix Semiconductor Inc. (South Korea)
Youngmo Lee, Hynix Semiconductor Inc. (South Korea)
Bo-Kyung Choi, Hynix Semiconductor Inc. (South Korea)
Yongkyoo Choi, Hynix Semiconductor Inc. (South Korea)
Oscar Han, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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