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Proceedings Paper

157-nm alternating phase-shifting mask design and high-NA images
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Paper Abstract

This report is the second series of 157nm alternating phase shifting mask done at ISMT. In this report, we present a comprehensive study of balancing aerial image through various feature sizes and pitches. New resutls of resist imagse are analyzed from a 157-nm alternating PSM with a 0.85 NA lens. The mask is made by dual trench technique with a phase-etch of 115nm and an isotropic under-etch of 90nm based on optimized simulation results. With this dual trenched mask, the wafer printing images show tremendous improvement on 'line paring' phenomena. We also investigate some abnormal CD variation across line array observed during this study. The results from this work give an initial assessment of 157-nm capability of alternating PSM and 157-nm resist imaging quality.

Paper Details

Date Published: 17 December 2003
PDF: 8 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518310
Show Author Affiliations
Yung-Tin Chen, Matrix Semiconductor (United States)
Jeff Meute, International SEMATECH (United States)
Kim Dean, International SEMATECH (United States)
Peter D. Brooker, SIGMA-C (United States)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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