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Proceedings Paper

Mask patterning technology with KrF photomask repeater
Author(s): Taejoong Ha; Munki Lim; Youngmo Lee; Bo-Kyung Choi; Yongkyoo Choi; Oscar Han
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Paper Abstract

It is intended to evaluate the feasibility of 0.15μm generation mask fabrication with a KrF photomask repeater. Inter-field registration accuracy(3sigma) is 28nm in X direction and 45nm in Y direction on a daughter mask in the KrF photomask repeater process and that is out of the registration specification(3sigma 30nm) of 0.15μm generation mask. The intra-field registration accuracy(3sigma) within a 18.4mm × 23.0mm field on a daughter mask is about 9nm with compensation of mis-registration to a mother mask. Inter-field CD uniformity(3sigma) is 8nm on a daughter mask and intra-field CD uniformity(3sigma) can be improved into 15nm with the compensation of CD error to a mother mask. Pattern fidelity in the KrF photomask repeater is inferior to that of the e-beam process. Hence it is necessary to apply OPC pattern to a mother mask in order to fabricate the 0.15μm generation mask.

Paper Details

Date Published: 17 December 2003
PDF: 11 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518249
Show Author Affiliations
Taejoong Ha, Hynix Semiconductor Inc. (South Korea)
Munki Lim, Hynix Semiconductor Inc. (South Korea)
Youngmo Lee, Hynix Semiconductor Inc. (South Korea)
Bo-Kyung Choi, Hynix Semiconductor Inc. (South Korea)
Yongkyoo Choi, Hynix Semiconductor Inc. (South Korea)
Oscar Han, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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