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Proceedings Paper

Optimization of a 65-nm alternating phase-shift quartz etch process
Author(s): Scott A. Anderson; Rex B. Anderson; Melisa J. Buie; Madhavi Chandrachood; Jason O. Clevenger; Yvette Lee; Nicole L. Sandlin; Jian Ding
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Paper Abstract

As mask features advance to the 65 nm technology node, the ability to develop advanced phase shifting masks with reliable and repeatable processes is becoming increasingly important. Changes in process conditions (i.e. power, pressure, gases, etc.), play an important role in the reduction of RIE lag, micro-trenching, loading and the improvement of sidewall profiles. In this study, the effects of changing process conditions on the TetraTM II Photomask Etch System were investigated. Process development was conducted to screen for a quartz etch process regime with enhanced performance.

Paper Details

Date Published: 17 December 2003
PDF: 10 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518231
Show Author Affiliations
Scott A. Anderson, Etec Systems, Inc., an Applied Materials Co. (United States)
Rex B. Anderson, Etec Systems, Inc., an Applied Materials Co. (United States)
Melisa J. Buie, Etec Systems, Inc., an Applied Materials Co. (United States)
Madhavi Chandrachood, Etec Systems, Inc., an Applied Materials Co. (United States)
Jason O. Clevenger, Etec Systems, Inc., an Applied Materials Co. (United States)
Yvette Lee, Etec Systems, Inc., an Applied Materials Co. (United States)
Nicole L. Sandlin, Etec Systems, Inc., an Applied Materials Co. (United States)
Jian Ding, Etec Systems, Inc., an Applied Materials Co. (United States)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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