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Proceedings Paper

Influence of antireflection coatings in ArF lithography
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Paper Abstract

The impact of wafer and reticle anti-reflection coatings (ARCs) on the aerial image of ArF lithography scanners is measured using contrast curves and critical dimension (CD) analysis. The importance of a good ARC layer on the wafer appears to be greater than that of the reticle-ARC. In fact, for state-of-the-art lithography scanners, the influence of the reticle-ARC is practically undetectable. Numerical simulations are used to understand the relative contributions of the lens, the wafer and the reticle to the overall loss of contrast associated with non-optimized ARCs.

Paper Details

Date Published: 17 December 2003
PDF: 11 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518220
Show Author Affiliations
Bruno M. La Fontaine, Advanced Micro Devices, Inc. (United States)
Adam Richard Pawloski, Advanced Micro Devices, Inc. (United States)
Alden Acheta, Advanced Micro Devices, Inc. (United States)
Yunfei Deng, Advanced Micro Devices, Inc. (United States)
Univ. of California/Berkeley (United States)
Harry J. Levinson, Advanced Micro Devices, Inc. (United States)
Christopher Spence, Advanced Micro Devices, Inc. (United States)
Christian Chovino, DuPont Photomasks, Inc. (United States)
Laurent Dieu, DuPont Photomasks, Inc. (United States)
Eric Johnstone, DuPont Photomasks, Inc. (United States)
Franklin Kalk, DuPont Photomasks, Inc. (United States)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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