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Proceedings Paper

Mask challenges and capability development for the 65-nm device technology node: the first status report
Author(s): Won D. Kim; Christopher M. Aquino; Mark D. Eickhoff; Phillip Lim; Nobuhiko Fukuhara; Scott W. Jessen; Yasutaka Kikuchi; Junichi Tanzawa
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Paper Abstract

The slow progress of the 157nm-F2 laser exposure tool development results in broad adaptation of high numerical aperture (NA>0.8) 193nm-ArF lithography for the 65nm-node production solution. This decision, however, forces lithographers to increase dependency on very aggressive RET technologies. This in turn demands mask making capabilities the industry has never faced before such as 100nm (@4X on mask scale) size Sub Resolution Assist Features (SRAF). This report covers our early work on our mask making capability development for the 65nm-node process technology development cycle for production in 2005. Our report includes the 65nm node mask technology capability development status for mask CD and registration dimensions control, current inspection capability/issues and development efforts for critical layer masks with aggressive RET (especially of EAPSM with SRAF).

Paper Details

Date Published: 17 December 2003
PDF: 12 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518205
Show Author Affiliations
Won D. Kim, Texas Instruments Inc. (United States)
Christopher M. Aquino, KLA-Tencor Corp. (United States)
Mark D. Eickhoff, KLA-Tencor Corp. (United States)
Phillip Lim, KLA-Tencor Corp. (United States)
Nobuhiko Fukuhara, Toppan Printing Co., Ltd. (Japan)
Scott W. Jessen, Texas Instruments Inc. (United States)
Yasutaka Kikuchi, Toppan Printing Co., Ltd. (Japan)
Junichi Tanzawa, Toppan Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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