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Proceedings Paper

A new concept of image imbalance correction for phase-shift mask lithography at 65 nm
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Paper Abstract

As we approach the 65nm node, the impact of the image imbalance phenomenon in phase shift mask lithography is proving to have a serious impact on the robustness of the phase shift mask solution. In this work we describe a new concept for the phase shift imbalance correction. The method is based on an interference concept that allows the manipulation of the image intensity by placing sub resolution features within the zero phase regions. Rigorous 3D simulations illustrate the reduction in the intensity of the 0 degree phase regions to match the intensity of the 180 degree phase intensity, effectively correcting for the image imbalance. We show that the phase shift mask low sigma illumination conditions reduce the risk of printing these sub-resolution binary features increasing the flexibility to vary the size of the feature based on circumstances to fine tune the correction locally.

Paper Details

Date Published: 17 December 2003
PDF: 8 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518165
Show Author Affiliations
Vishnu G. Kamat, Synopsys, Inc. (United States)
Armen Kroyan, Synopsys, Inc. (United States)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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