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Proceedings Paper

Improvements in binary chrome CD performance utilizing an optimized 4th-generation reactor platform
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Paper Abstract

The ITRS roadmap indicates that significant improvements in photomask dry etching will be necessary to achieve the design goals of 90nm and 65nm technology node masks. Although some existing dry etch systems are capable of R&D work on these masks, a new dry etch system is needed to achieve production worthy results. To this end, a new 4th generation mask etch system was designed and built by Unaxis USA, Inc. In early testing, the Unaxis Mask Etcher 4 has demonstrated significant improvements in CD uniformity and linearity compared to earlier systems. A designed experiment (DoE) was performed on this new system to more fully characterize its performance window. The results of these experiments are presented and compared to a standard process performed on a Unaxis Mask Etcher 3.

Paper Details

Date Published: 17 December 2003
PDF: 8 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518138
Show Author Affiliations
Jason Plumhoff, Unaxis USA, Inc. (United States)
Chris Constantine, Unaxis USA, Inc. (United States)
Jong Shin, Unaxis USA, Inc. (United States)
Brad Reelfs, Unaxis USA, Inc. (United States)
Emmanuel Rausa, Unaxis USA, Inc. (United States)

Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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