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Proceedings Paper

EUV mask simulation for AIMS
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Paper Abstract

The objective of this paper is to assess how variations of the chief ray angle of the illumination light incident on an EUV multilayer mask as well as the light bandwidth affect the performance of an AIMS EUV tool with respect to CD measurement and defect evaluation. To this end EUV images were simulated with an EUV lithography simulator developed by the Fraunhofer Institute IISB. The simulations were performed for a multilayer mask with a buried defect under an isolated line. The specifics of the AIMS EUV were taken into account by a superposition of aerial images obtained for different wavelengths. The presentation discusses the simulations and their results.

Paper Details

Date Published: 17 December 2003
PDF: 10 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518053
Show Author Affiliations
Roman Windpassinger, Carl Zeiss Microelectronic Systems GmbH (Germany)
Norbert Rosenkranz, Carl Zeiss Microelectronic Systems GmbH (Germany)
Thomas Scherubl, Carl Zeiss Microelectronic Systems GmbH (Germany)
Peter Evanschitzky, Fraunhofer-Institut fur Integrierte Systeme und Bauelementetechnologie (Germany)
Andreas Erdmann, Fraunhofer-Institut fur Integrierte Systeme und Bauelementetechnologie (Germany)
Axel Zibold, Carl Zeiss Microelectronic Systems GmbH (Germany)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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