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Proceedings Paper

A study of defect measurement techniques and corresponding effects on the lithographic process window for a 193-nm EPSM photomask
Author(s): Anthony B. Nhiev; Jason Hickethier; Haiqing Zhou; Trent A. Hutchinson; William Howard; Mohsen Ahmadian
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Paper Abstract

Photomasks with small dense features and high mask error enhancement factor (MEEF) lithography processes require stringent reticle quality control. The ability to quickly and accurately measure reticle defects on a high-resolution inspection system and to simulate their impact on wafer printing are key components in ensuring photomask quality. This paper discusses the correlation of measurements made with UV and DUV-based inspection systems; simulation performed with a 193nm aerial image review tool and aerial image simulation software. Ease-of-use is discussed for each technique. Data accuracy is compared to measurements performed by a Scanning Electron Microscope (SEM) on mask and wafer. Tests show that the inspection system can quickly and accurately determine sizes of most defects. The study also indicates that the simulation techniques can accurately tract the lithographic results, and can be used to reduce or eliminate the use of test wafers and expensive lithography and wafer metrology time. The outcome of this study leads to better defect dispositioning by providing techniques to determine the size and printability of reticle defects.

Paper Details

Date Published: 17 December 2003
PDF: 10 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518048
Show Author Affiliations
Anthony B. Nhiev, DuPont Photomasks, Inc. (United States)
Jason Hickethier, DuPont Photomasks, Inc. (United States)
Haiqing Zhou, Texas Instruments Inc. (United States)
Trent A. Hutchinson, KLA-Tencor Corp. (United States)
William Howard, KLA-Tencor Corp. (United States)
Mohsen Ahmadian, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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