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Proceedings Paper

Mask pattern fidelity quantification
Author(s): Wen-Chuan Wang; Shih-Ming Chang; Chih-Cheng C. Chin; Chi-Lun Lu; Angus S.J. Chin; Hung-Chang Hsieh; Shinn-Sheng Yu
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Paper Abstract

In this paper, a quantitative evaluation of mask quality in the domain of 2D pattern fidelity and a method of assessing the OPC model effectiveness are investigated. The spirit of our algorithm is to characterize the wafer lithographic performances of both the real physical mask and the ideal OPCed layout mask that the physical mask is based on. To acquire these performances, we adopted a CD-SEM image process technique for transforming an actual SEM mask image into a simulation-friendly format like GDSII together with the methods to correctly handle the image transformation and interpret the simulation results. Finally, the images, such as the simulated aerial images, the simulated or observed resist top views, are superposed for comparison using logic operation.

Paper Details

Date Published: 17 December 2003
PDF: 10 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518041
Show Author Affiliations
Wen-Chuan Wang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Shih-Ming Chang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chih-Cheng C. Chin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chi-Lun Lu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Angus S.J. Chin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Hung-Chang Hsieh, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Shinn-Sheng Yu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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