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Proceedings Paper

Using location of diffraction orders to predict performance of future scanners
Author(s): Peter Brooker
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Paper Abstract

Predictions have been made from exposure tool manufacturers as to the dense line lithographic capabilities of present and future tools. In particular, the predictions specify which dense line pitch will be achievable as a function of wavelength, mask type, NA and illumination conditions. Tremendous insight can be gained into these predictions by investigating the location of the first diffraction order with respect to the edge of the objective aperture for each case. Simple rules for dense line/spaces will be developed regarding scanner capabilities from the perspective of diffraction order location. These rules will then be used to predict line/space capabilities for hyper-NA systems. For reference, the diffraction order patterns of dense contacts and a representative DRAM brick wall structure will be presented. Also included in the paper will be a detailed derivation of the diffraction equations for dense lines and spaces for 180 degree alternating aperture phase shift masks. This derivation shows explicitly how the n=0 order is suppressed. It is the extension of previous work that derived the diffraction equations for a non phase shifted array of slits.

Paper Details

Date Published: 17 December 2003
PDF: 12 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518040
Show Author Affiliations
Peter Brooker, SIGMA-C (United States)

Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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