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Proceedings Paper

200-mm EPL stencil mask fabrication and metrology
Author(s): Hiroshi Fujita; Tadahiko Takigawa; Mikio Ishikawa; Yu-ki Aritsuka; Satoshi Yusa; Morihisa Hoga; Hisatake Sano
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Paper Abstract

200-mm electron-beam projection lithography (EPL) masks were fabricated starting from stress-controlled silicon-on-insulator (SOI) substrates. The internal stress of the SOI layer is controlled to be ca. 10 MPa by B doping. The blank fabrication process has been established by the Bosch deep trench etch process. EB patterning was done on a JEOL JBX9000MVII with a positive-tone chemically amplified resist of 400-nm thickness. Resist image of 200-nm wide lines-and-spaces pattern was transferred to 2-um thick SOI layer by a shallow trench etching. A dual-mode critical dimension (CD)-SEM was implemented, and used for mask characterization. Preliminary results on uniformity of CD-shift in the dry etching and final CD were reported. 200-mm EPL masks with a gate layer of a system-on-chip device pattern were fabricated.

Paper Details

Date Published: 17 December 2003
PDF: 8 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518034
Show Author Affiliations
Hiroshi Fujita, Dai Nippon Printing Co., Ltd. (Japan)
Tadahiko Takigawa, Dai Nippon Printing Co., Ltd. (Japan)
Mikio Ishikawa, Dai Nippon Printing Co., Ltd. (Japan)
Yu-ki Aritsuka, Dai Nippon Printing Co., Ltd. (Japan)
Satoshi Yusa, Dai Nippon Printing Co., Ltd. (Japan)
Morihisa Hoga, Dai Nippon Printing Co., Ltd. (Japan)
Hisatake Sano, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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