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Proceedings Paper

Optimization of nanomachining repair condition for ArF lithography
Author(s): Tsuyoshi Amano; Masaharu Nishiguchi; Hiroyuki Hashimoto; Yasutaka Morikawa; Naoya Hayashi; Roy White; Ron Bozak; Lee Terrill
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Paper Abstract

Nanomachining is a new technique for repairing photomask defects. The advantages of this technique are no substrate damage, precise edge placement position and Z height accuracy when compared with current Laser zapper or FIB GAE repair techniques. We have reported that this technique can be applied to any type of opaque film material defects, quartz bump defects on Alternating Aperture Phase Sifting Masks (AAPSM) and complex pattern defect repairs. In this report, we have evaluated about the optimization of Nanomachining condition for repairing most advanced photomasks for 193nm lithography on the materials of binary chrome and MoSi HT-PSM. Evaluation items are adequate edge position and Z height for targeting to achieve better printing performance when analyzed with an AIMS 193nm tool.

Paper Details

Date Published: 17 December 2003
PDF: 8 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518025
Show Author Affiliations
Tsuyoshi Amano, Dai Nippon Printing Co., Ltd. (Japan)
Masaharu Nishiguchi, Dai Nippon Printing Co., Ltd. (Japan)
Hiroyuki Hashimoto, Dai Nippon Printing Co., Ltd. (Japan)
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
Roy White, RAVE LLC (United States)
Ron Bozak, RAVE LLC (United States)
Lee Terrill, RAVE LLC (United States)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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