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Proceedings Paper

Full-chip application for SRAM gate at 100-nm node and beyond using chromeless phase lithography
Author(s): Ji-Soong Park; Sung-Hyuck Kim; In-Kyun Shin; Sung-Woon Choi; Jung-Min Sohn; Jae-Han Lee; Hye-soo Shin; Thomas L. Laidig; Douglas J. Van Den Broeke; J. Fung Chen
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Paper Abstract

High speed circuit usually requires additional gate scaling regardless of its developed technology node. In this paper, we demonstrate the full-chip-level wafer result for 100nm node SRAM gate and the possibility of future gate scaling. Test reticle is manufactured using chromeless phase lithography(CPL). CPL technology uses a COG that consists of p -phased-etched quartz and chrome shield for various gate CD formation. Critical transistor area is 100% transmission PSM. However, less-critical area should be a chrome for adequate CD control. Because light interference is weakened in phase area according to the separation of paired phase edges increase. The optical performance and manufacturing issues of CPL are evaluated compared to other PSM technologies. Finally, we describe how to optimize the CPL mask using simulation and wafer analysis to obtain the acceptable OCV and DOF margin for volume production.

Paper Details

Date Published: 17 December 2003
PDF: 10 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518014
Show Author Affiliations
Ji-Soong Park, Samsung Electronics Co., Ltd. (South Korea)
Sung-Hyuck Kim, Samsung Electronics Co., Ltd. (South Korea)
In-Kyun Shin, Samsung Electronics Co., Ltd. (South Korea)
Sung-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)
Jae-Han Lee, Samsung Electronics Co., Ltd. (South Korea)
Hye-soo Shin, Samsung Electronics Co., Ltd. (South Korea)
Thomas L. Laidig, ASML Masktools, Inc. (United States)
Douglas J. Van Den Broeke, ASML Masktools, Inc. (United States)
J. Fung Chen, ASML Masktools, Inc. (United States)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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