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Proceedings Paper

A 0.5-W 850-nm AlxGa1-xAs VECSEL with intracavity silicon carbide heatspreader
Author(s): Jennifer E. Hastie; Chan Wook Jeon; David Burns; John-Mark Hopkins; Stephane Calvez; Richard Abram; Martin D. Dawson
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Paper Abstract

High thermal conductivity intra-cavity crystalline heatspreaders are used to control the pump-induced temperature increase limiting the power scaling of vertical external-cavity surface-emitting lasers (VECSELs). Pump-power-limited output of greater than 0.4 W was achieved from a GaAs-based VECSEL at room temperature with the use of a silicon carbide heatspreader bonded to the surface of the gain element and 0.5 W by water-cooling the system to 7.5°C.

Paper Details

Date Published: 6 October 2003
PDF: 6 pages
Proc. SPIE 5137, International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems, (6 October 2003); doi: 10.1117/12.517987
Show Author Affiliations
Jennifer E. Hastie, Univ. of Strathclyde (United Kingdom)
Chan Wook Jeon, Univ. of Strathclyde (United Kingdom)
David Burns, Univ. of Strathclyde (United Kingdom)
John-Mark Hopkins, Univ. of Strathclyde (United Kingdom)
Stephane Calvez, Univ. of Strathclyde (United Kingdom)
Richard Abram, Univ. of Strathclyde (United Kingdom)
Martin D. Dawson, Univ. of Strathclyde (United Kingdom)


Published in SPIE Proceedings Vol. 5137:
International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems
Guenter Huber; Ivan A. Scherbakov; Vladislav Ya. Panchenko, Editor(s)

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