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Proceedings Paper

Dehydration bake effects with UV/O3 treatment for 130-nm node PSM processing
Author(s): Yong-Dae Kim; Dong-Seuk Lee; Dong-Il Park; Hyuk-Joo Kwon; Jin-Min Kim; Sung-Mo Jung; Sang-Soo Choi
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Paper Abstract

As feature sizes of phase shift mask (PSM) have dropped below half-micron, resist adhesion have become a more critical issue, especially during second level lithography. Second writing process requires special consideration, because the resist's mechanical strength of resists on patterned chrome and patterned glass is smaller in comparison to that on the un-patterned chrome blank. If the adhesion strength is not sufficient to withstand the stress during subsequent processes, patterns will be damaged during second level lithography. Resists stress at pattern edges that subsequent processes, pattern will be damaged during second level lithography. Resist stress at pattern edges that weaken its adhesive property, together with the low mechanical strength of resists on glass, creates ample probability for the unwanted phenomenon in PSM process. In this paper, we investigate the effects of property and adhesive strength of resists on surfaces at different treatment before resist coating process, and observe the defects generation after different treatment.

Paper Details

Date Published: 17 December 2003
PDF: 8 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.517977
Show Author Affiliations
Yong-Dae Kim, Photronics-PKL Co., Ltd. (South Korea)
Dong-Seuk Lee, Photronics-PKL Co., Ltd. (South Korea)
Dong-Il Park, Photronics-PKL Co., Ltd. (South Korea)
Hyuk-Joo Kwon, Photronics-PKL Co., Ltd. (South Korea)
Jin-Min Kim, Photronics-PKL Co., Ltd. (South Korea)
Sung-Mo Jung, Photronics-PKL Co., Ltd. (South Korea)
Sang-Soo Choi, Photronics-PKL Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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