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Proceedings Paper

EUV radiation damage test on EUVL mask absorber materials
Author(s): Bing Lu; James R. Wasson; Sang-In Han; Pawitter Mangat; Victoria Golovkina; Franco Cerrina
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Paper Abstract

We have studied the EUV mask absorber stack materials stability under extended EUV radiation exposure using the Synchrotron facility located at Aladdin Synchrotron Radiation Center of UW-Madison. The DUV reflectivity was measured at the area where the absorber stack was exposed to EUV radiation for different period of time to understand the impact on mask inspection during use and potential radiation damage. The longest exposure time simulated 2 million EUV exposure shots based on the resist sensitivity of 5 mJ/cm2. After EUV radiation, a significant increase in DUV reflectivity was observed. However, this change may be due to the hydrocarbon contamination from the EUV exposure chamber because an obvious darkening was observed on the exposed area and could be easily removed by a short O2 plasma etching. The experimental data showed that reflectivity was restored after O2 plasma etching and the difference was less than 2%. X-ray photoelectron spectroscopy (XPS) and forward recoil spectrometry also used for the confirmation of hydrocarbon build up during exposure.

Paper Details

Date Published: 17 December 2003
PDF: 7 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.517972
Show Author Affiliations
Bing Lu, Motorola, Inc. (United States)
James R. Wasson, Motorola, Inc. (United States)
Sang-In Han, Motorola, Inc. (United States)
Pawitter Mangat, Motorola, Inc. (United States)
Victoria Golovkina, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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