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Proceedings Paper

Isochronal annealing of radiation defects in p-type silicon during irradiating with 8 MeV electrons
Author(s): Zurab B. Basheleishvili; Teimuraz A. Pagava; Tamaz V. Eterashvili
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Paper Abstract

The local irradation and the method of balk photo-e.m.f. measurement were used for a study of irradiation defects in p-type single silicon irradiated with 8 MeV energy electrons. On the basis of experimental and theoretical studies it was concluded that in irradiating p-type silicon with 8 MeV eneryg electrons the share of atomic cascades in radiation damage production begins to prevail over diffusion. Annealing results have shown that in this case it was possible to create tetra vacancies just like the primary defects are formed. Creation of small disordered areas is not excluded.

Paper Details

Date Published: 10 October 2003
PDF: 4 pages
Proc. SPIE 5127, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (10 October 2003); doi: 10.1117/12.517952
Show Author Affiliations
Zurab B. Basheleishvili, Georgian Technical Univ. (Georgia)
Teimuraz A. Pagava, Georgian Technical Univ. (Georgia)
Tamaz V. Eterashvili, Georgian Technical Univ. (Georgia)


Published in SPIE Proceedings Vol. 5127:
Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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