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Proceedings Paper

157-nm attenuated phase-shift mask materials with irradiation stability
Author(s): James R. Wasson; Nora V. Edwards; Bing Lu; Pawitter Mangat; Andrew Grenville
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Paper Abstract

The next suite of optical lithography tools beyond 193nm will use 157nm irradiation to illuminate the mask pattern onto a semiconductor wafer. As the illumination wavelength decreases, the number of materials that can be used to create attenuated phase shift masks decreases dramatically. Especially the number of materials that maintain constant transmission after prolonged irradiation. The Ta-based and Cr-based materials have been recognized as two such sets of materials that remain optically unchanged due to prolonged VUV irradiation. Optical characterization of these materials by spectroscopic ellipsometry has been used to simulate several material systems to achieve proper transmission and phase shift while simultaneously improving the inspection contrast of the patterned mask. Both simulation and experimental results will be presented for Ta-based and/or Cr-based material systems that maintain relatively constant transmission for more than 50 million pulses under 157nm irradiation.

Paper Details

Date Published: 17 December 2003
PDF: 5 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.517893
Show Author Affiliations
James R. Wasson, Motorola, Inc. (United States)
Nora V. Edwards, Motorola, Inc. (United States)
Bing Lu, Motorola, Inc. (United States)
Pawitter Mangat, Motorola, Inc. (United States)
Andrew Grenville, International SEMATECH (United States)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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