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Proceedings Paper

New method for approaching the loading-free process for photomask Cr etching
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Paper Abstract

In photomask manufacturing, etch loading effect is one of the most serious problems. The equal size of isolated clear patterns, each of which is surrounded by different pattern density, can show different CD (critical dimension) results after Cr etching process. Furthermore, as the feature size decreases and pattern density increase, the burden of Cr loading effect in mask fabrication is more enlarged than ever. In this paper, we will present the new method for approaching to the loading free process in photomask Cr dry etch.

Paper Details

Date Published: 17 December 2003
PDF: 7 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.517842
Show Author Affiliations
Il-Yong Jang, Samsung Electronics Co., Ltd. (South Korea)
Jeong-Yun Lee, Samsung Electronics Co., Ltd. (South Korea)
Sung-Yong Moon, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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