Share Email Print

Proceedings Paper

Fabrication of programmed phase defects on EUV multilayer blanks
Author(s): Takeru Kinoshita; Tsutomu Shoki; Hideo Kobayashi; Ryo Ohkubo; You-Ichi Usui; Morio Hosoya; Noriyuki Sakaya; Osamu Nagarekawa
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Programmed phase defects, at desirably specified sizes and known locations, for EUV multilayer blanks were successfully fabricated by the following newly developed simple technique; depositing Cr film on a 6025 glass substrate or a Si wafer, generating Cr patterns of isolated lines and/or dots by EB lithography, and depositing Mo/Si multilayer of 40-bilayers by ion beam sputtering over the Cr patterns. Thereby, programmed bump defects were created on the multilayer surface over the Cr pattern at the bottom. The programmed defects were observed by TEM and AFM, of which images revealed behavior of the multilayer growth on the Cr patterns. The observed images show that height and full width at half maximum (FWHM) of the bump on the multilayer surface strongly depended on the Cr pattern in height and width, and also incident angle of the sputtered molecular flux to the substrate surface. The multilayer coating at near-normal (vertical) incidence provides a significant amount of smoothing near the Cr patterns. A bump phase defect of 2-nm height and 60-nm FWHM, as the result, was obtained on the multilayer surface using a 5-nm thick Cr pattern, which corresponded to a minimum killer defect for EUV lithography at 45-nm node. The multilayer blanks with the programmed phase defects can be effectively used as a standard for defect inspection tool development and defect printability study. This paper describes a simple fabrication process of the programmed phase defects on EUV multilayer blanks, evaluation results on the programmed phase defects, and growth behaviors of multilayer on various patterns (seed of the defects).

Paper Details

Date Published: 17 December 2003
PDF: 12 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.517836
Show Author Affiliations
Takeru Kinoshita, HOYA Corp. (Japan)
Tsutomu Shoki, HOYA Corp. (Japan)
Hideo Kobayashi, HOYA Corp. (Japan)
Ryo Ohkubo, HOYA Corp. (Japan)
You-Ichi Usui, HOYA Corp. (Japan)
Morio Hosoya, HOYA Corp. (Japan)
Noriyuki Sakaya, HOYA Corp. (Japan)
Osamu Nagarekawa, HOYA Corp. (Japan)

Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

© SPIE. Terms of Use
Back to Top