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Proceedings Paper

Effect of mask pattern fidelity on 193-nm lithography performance
Author(s): Ching Chi Cheng; Tsung-Lin Su; Fei-Geo Tsai; Tsong-Hsien Tsai; Chin-Chiang Tu; Chue-San Yoo
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Paper Abstract

As device technology shrinks beyond 0.13um, extensive resolution enhancement techniques such as PSM and OPC are employed in an attempt to gain usable photo process windows. Pattern fidelity on a mask measured in terms of corner rounding and line end shortening significantly influences the expected wafer performance. In this work, we report the effects of mask making parameters on the mask pattern fidelity and the resulting wafer pattern fidelity.

Paper Details

Date Published: 17 December 2003
PDF: 8 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.517829
Show Author Affiliations
Ching Chi Cheng, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Tsung-Lin Su, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Fei-Geo Tsai, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Tsong-Hsien Tsai, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chin-Chiang Tu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chue-San Yoo, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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