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Proceedings Paper

Luminescence behavior of Eu (TTFA)3-doped B2O3-SiO2 film prepared by sol-gel process
Author(s): Xianping Fan; Huawen Yao; Zhiyu Wang; Minquan Wang
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Paper Abstract

Luminescence behavior of Eu(TTFA)3 doped B2O3-SiO2 films prepared by sol-gel process has been investigated. With the increase of heat treatment temperature and time, the Eu(TTFA)3 complexes were gradually synthesized and luminescence intensity gradually increased. There existed an efficient luminescence layer in the Eu(TTFA)3 doped B2O3-SiO2 films. The thickness of the efficient luminescence layer depends significantly on the B2O3 content of the gel. The thickness of the efficient luminescence layer decreased obviously with increase of B2O3 contents in B2O3-SiO2 gel films. The influence of the film thickness on the transmitted intensity of the Eu(TTFA)3 doped B2O3-SiO2 gel films indicated that the thickness of the efficient luminescence layer of the Eu(TTFA)3 doped B2O3-SiO2 films depended on the absorption of incident excitation light by the organic ligands in the gel film.

Paper Details

Date Published: 16 July 2003
PDF: 5 pages
Proc. SPIE 5061, International Symposium on Photonic Glass (ISPG 2002), (16 July 2003); doi: 10.1117/12.517446
Show Author Affiliations
Xianping Fan, Zhejiang Univ. (China)
Huawen Yao, Zhejiang Univ. (China)
Zhiyu Wang, Zhejiang Univ. (China)
Minquan Wang, Zhejiang Univ. (China)


Published in SPIE Proceedings Vol. 5061:
International Symposium on Photonic Glass (ISPG 2002)
Congshan Zhu, Editor(s)

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