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Proceedings Paper

First-principle electronic structure calculations of MeAs/GaAs(001) multilayers and GaAs surfaces
Author(s): S. E. Kulkova; I. Yu. Smolin; Arsen V. Subashiev
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Paper Abstract

A full-potential linearized augmented plane wave (FLAPW) method is used to investigate (MeAs)1(GaAs)n (001) multi-layer structures wiht Me=Al, In, Cs as well as GaAs (001) and (110) surfaces. The layer-resolved densities of states, electron energy spectrum and valence charge-densities are analyzed. The adsorption of cesium is studied on both GaAs surfaces. The coverage dependence of the work function is obtained and is found to be in satisfactory agreement with experiments.

Paper Details

Date Published: 10 October 2003
PDF: 5 pages
Proc. SPIE 5127, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (10 October 2003); doi: 10.1117/12.517429
Show Author Affiliations
S. E. Kulkova, Institute of Strength Physics and Materials Science (Russia)
I. Yu. Smolin, Institute of Strength Physics and Materials Science (Russia)
Arsen V. Subashiev, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 5127:
Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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