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Proceedings Paper

Highly spin-polarized electron emission from InGaAlAs strained layer with enlarged effective negative electron affinity
Author(s): Yuri A. Mamaev; Henri-Jean Drouhin; G. Lampel; Arsen V. Subashiev; Yuri P. Yashin; Alexander Roshchansky
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Paper Abstract

Integrated polarization and quantum yield spectra of the electrons, photoemitted from strained AlInGaAs layer, capped by heavily doped thin GaAs quantum well layer, as well as high resolution energy distriubtion curves and a polarization versus energy distribution curves are studied as a function fo light excitation energy and power. The polarization P of up to 83% in conjunction with quantum yield Y=0.5 at T=130K have been measured. At high excitation intensity decrease of Y and P is observed which is attributed to the surface photovoltage effects, i.e. decrease of the negative electron affinity, narrowing of the band-bending region and an increase of the hole concentration in the quatnum well layer. The narrow-band quantum well is shown to provide high effective negative electron afffinity values with no harm to electron polarization.

Paper Details

Date Published: 10 October 2003
PDF: 6 pages
Proc. SPIE 5127, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (10 October 2003); doi: 10.1117/12.517427
Show Author Affiliations
Yuri A. Mamaev, St. Petersburg State Technical Univ. (Russia)
Henri-Jean Drouhin, Ecole Polytechnique (France)
G. Lampel, Ecole Polytechnique (France)
Arsen V. Subashiev, St. Petersburg State Technical Univ. (Russia)
Yuri P. Yashin, St. Petersburg State Technical Univ. (Russia)
Alexander Roshchansky, St. Petersburg State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 5127:
Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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