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Proceedings Paper

Influence of ionizing irradiation on the basis characteristics of cooled photoresistors on the basis CdxHg1-xTe
Author(s): Eldar Y. Salaev; D. Sh. Abdinov; K. A. Askerov
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Paper Abstract

The influence of the ionizing irradiation of different kind on the basic parameters, elements, designs and constructional materials of photoreceivers on the basis of CdxHg1-xTe solid solution have been investigated. It is established, that the change of the basic parameters of the photoresistors is mainly connected with the change of properties of photosensitive elements. It has been shown that these photoreceivers may me used for operating under high irradiation conditions.

Paper Details

Date Published: 30 September 2003
PDF: 5 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517417
Show Author Affiliations
Eldar Y. Salaev, Institute of Photoelectronics ANAS (Azerbaijan)
D. Sh. Abdinov, Institute of Photoelectronics ANAS (Azerbaijan)
K. A. Askerov, Institute of Photoelectronics ANAS (Azerbaijan)

Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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