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Proceedings Paper

Influence of ionizing irradiation on photoelectric properties of GaSxSe1-x solid solutions
Author(s): K. A. Askerov; F. I. Ismaylov
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Paper Abstract

The influence of ionizing irradiation of a various kind on photoelectric properties of the GaSxSe1-x (0≤x≤0.25) has been investigated. It is established that hte change of physical properties of researched samples as a result of the influence of the ionizing irradiation is convertible process connected, basically, with effects of ionization and surface effects. It is shown, that these materials can be used as a sensitive element for manufacturing gauges of the ionizing irradiation.

Paper Details

Date Published: 30 September 2003
PDF: 3 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517413
Show Author Affiliations
K. A. Askerov, Institute of Photoelectronics ANAS (Azerbaijan)
F. I. Ismaylov, Institute of Photoelectronics ANAS (Azerbaijan)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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