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Proceedings Paper

Electron diffraction study of photosensitive heterostructures PbSnTe-PbTe grown by MBE
Author(s): A. I. Dirochka; A. S. Kononov; P. S. Serebrennikov; N. A. Suleimanov
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Paper Abstract

Electron diffraction study of PbTe and PbSnTe epitaxial layer surface and heterojunctions on their bases grown by MBE on mica was carried out. The aim of this study was determination of correlation between diffusion streaks intensity on diffraction patterns and photoelectric parameters of p-n junctions made in these structures. The diffusion streaks intensity depends on thickness and temperature of layers growing. More pronounced streaks on electron diffraction patterns are observed from thicker layers (d>1 μm) grown at higher temperatures (>300°C). Diffusion streaks intensity of heterolayers PbSnTe-PbTe grown at 380-400°C changes most heavily at changing film thickness from tenth fractions of micron till approx. 1 μm. At further increase of film thickness till approx. 4-5 μm diffusion streaks intensity changes slightly. Peak of heterojunction of Pb1-xSnxTe-PbTe (x=0.2) photosensitivity grown at 380-400°C at film thickness 0.5-1μm locates at 4.5μm with sloping decreasing till 6μm. Heterojunction with same composition grown at same temperature with film thickness 4-5μm has peak of photoresponsivity at 8.5 μm. The correlation between diffusion streaks intensity and photoelectric parameters of film p-n structures is found out.

Paper Details

Date Published: 30 September 2003
PDF: 3 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517400
Show Author Affiliations
A. I. Dirochka, Research, Development, and Production Ctr. ORION (Russia)
A. S. Kononov, Research, Development, and Production Ctr. ORION (Russia)
P. S. Serebrennikov, Research, Development, and Production Ctr. ORION (Russia)
N. A. Suleimanov, Research, Development, and Production Ctr. ORION (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices

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