Share Email Print
cover

Proceedings Paper

Polycrystalline layers of silicon-germanium alloy for uncooled IR bolometers
Author(s): I. B. Chistokhin; I. P. Michailovsky; B. I. Fomin; E. I. Cherepov
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Polycrystalline layers of Si1-xGex of varying germanium fraction, in situ doped with boron, were received by molecular-beam deposition on layers of the silicon oxide and silicon nitride at temperatures <500°C. The structural properties of the films were studied, the dependences of the resistivity on the temperature and the low-frequency noise were measured. It has been demonstrated that, the temperature coefficient of resistance (TCR) in poly SiGe deposited on different dielectric coverings amounts to (3-4)%/grad and depends on resistance and grain size.

Paper Details

Date Published: 30 September 2003
PDF: 8 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517367
Show Author Affiliations
I. B. Chistokhin, Institute of Semiconductor Physics SB RAS (Russia)
I. P. Michailovsky, Institute of Semiconductor Physics SB RAS (Russia)
B. I. Fomin, Institute of Semiconductor Physics SB RAS (Russia)
E. I. Cherepov, Institute of Semiconductor Physics SB RAS (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

© SPIE. Terms of Use
Back to Top