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Proceedings Paper

The state of the art and prospects of CdxHg1-xTe molecular beam epitaxy
Author(s): V. S. Varavin; A. K. Gutakovsky; S. A. Dvoretsky; V. A. Kartashev; A. V. Latyshev; N. N. Mikhailov; D. N. Pridachin; V. G. Remestnik; S. V. Rukhlitsky; I. V. Sabinina; Yu. G. Sidorov; V. P. Titov; V. A. Shvetz; M. V. Yakushev; A. L. Aseev
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Paper Abstract

Molecular beam epitaxy of MCT makes it possible to dissolve the problems of producing MCT heteroepitaxial structures with uniformity parameters on the large size alternative substrates for IR PD of existent and new generation and the growing of MCT layers on Si -substrates. The information about characteristics of geteroepitaxial structures on GaAs-substrates, a new generation equipment for controlled growing of MCT layers by MBE and technological conditions allowed to grow the epitaxial buffer CdTe layers on Si-substrates are represented in this work.

Paper Details

Date Published: 30 September 2003
PDF: 9 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517366
Show Author Affiliations
V. S. Varavin, Institute of Semiconductor Physics SB RAS (Russia)
A. K. Gutakovsky, Institute of Semiconductor Physics SB RAS (Russia)
S. A. Dvoretsky, Institute of Semiconductor Physics SB RAS (Russia)
V. A. Kartashev, Institute of Semiconductor Physics SB RAS (Russia)
A. V. Latyshev, Institute of Semiconductor Physics SB RAS (Russia)
N. N. Mikhailov, Institute of Semiconductor Physics SB RAS (Russia)
D. N. Pridachin, Institute of Semiconductor Physics SB RAS (Russia)
V. G. Remestnik, Institute of Semiconductor Physics SB RAS (Russia)
S. V. Rukhlitsky, Institute of Semiconductor Physics SB RAS (Russia)
I. V. Sabinina, Institute of Semiconductor Physics SB RAS (Russia)
Yu. G. Sidorov, Institute of Semiconductor Physics SB RAS (Russia)
V. P. Titov, Institute of Semiconductor Physics SB RAS (Russia)
V. A. Shvetz, Institute of Semiconductor Physics SB RAS (Russia)
M. V. Yakushev, Institute of Semiconductor Physics SB RAS (Russia)
A. L. Aseev, Institute of Semiconductor Physics SB RAS (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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